Z-shaped current-voltage characteristics of disordered semiconductor superlatticesстатья
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Дата последнего поиска статьи во внешних источниках: 19 июля 2013 г.
Авторы:
Pupysheva O. ,
Dmitriev A. ,
Kozhanov A.
Журнал:
AIP Conference Proceedings
Том:
772
Год издания:
2005
Первая страница:
1005
Последняя страница:
1006
DOI:
10.1063/1.1994450
Аннотация:
Vertical electron transport in weakly-coupled semiconductor superlattices is studied theoretically. The Poisson equation and kinetic equation are solved self-consistently, taking into account the global charge conservation of the whole system including the contact layers. The current-voltage characteristics obtained numerically exhibit Z-shaped portions in addition to the conventional N-shaped maxima. We discuss the origin of N- and Z-shaped current maxima, and of the transitions between them. It is shown that the superlattice transport properties can be controlled by introducing the disorder into the layer parameters. © 2005 American Institute of Physics.
Добавил в систему:
Дмитриев Алексей Владимирович