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Charge carrier capture on semiconductor Coulomb centers with excitation of local center oscillationsстатья
Информация о цитировании статьи получена из
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Дата последнего поиска статьи во внешних источниках: 28 мая 2015 г.
- Авторы: Dmitriev A.V., Davidova I.E.
- Журнал: Soviet Physics Journal
- Том: 27
- Номер: 5
- Год издания: 1984
- Первая страница: 383
- Последняя страница: 385
- DOI: 10.1007/BF00898606
- Аннотация: Carrier lifetime in a semiconductor is calculated for capture in shallow Coulomb impurities with energy transfer to local center oscillations. The situation is considered in which the trap depth eopen I=Ry */2 is less than the local phonon energy and the temperature is low: T ≪ eopen I. The electron-phonon interaction is accomplished by change in the dipole component of the impurity potential or the short distance component of its potential. Under certain conditions this mechanism can be more effective than the cascade mechanism. © 1984 Plenum Publishing Corporation.
- Добавил в систему: Дмитриев Алексей Владимирович