Concentration and mobility of electrons in n-GaAs/AlGaAs:Si nanostructres under uniaxial compression in the dark and after illuminationстатья
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Дата последнего поиска статьи во внешних источниках: 17 июля 2019 г.
Аннотация:Resistivity, Hall effect and quantum oscillations of magnetoresistance in a 2D electron system at a n GaAs/Al0.29Ga0.71As:Si heterointerface have been investigated under uniaxial compression up to 3.5 kbar along [110] direction in the dark and after illumination by infrared diode at temperature 1.7 K. Observed persistent photoconductivity is connected with the excitation of deep DX centers in the active layer. The electron redistribution between the quantum well and the active layer explains pressure dependence of 2D electrons mobility and concentration fixed after illumination.