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Effect of the substrate crystalline structure on the magnetic, electrical, and crystallographic characteristics of La0.35Nd0.35Sr0.3MnO3 epitaxial filmsстатья
Информация о цитировании статьи получена из
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Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
- Авторы: Abramovich A.I., Gorbenko O.Y., Kaul A.R., Koroleva L.I., Michurin A.V., Szymczak R., Deev S.
- Журнал: Physics of the Solid State
- Том: 42
- Номер: 9
- Год издания: 2000
- Издательство: Pleiades Publishing, Ltd
- Местоположение издательства: Road Town, United Kingdom
- Первая страница: 1705
- Последняя страница: 1711
- DOI: 10.1134/1.1309455
- Аннотация: A study has been made of the electrical resistivity rho, magnetoresistance Delta rho/rho, and magnetization of La0.35Nd0.35Sr0.3MnO3 epitaxial films on ZrO2(Y2O3), SrTiO3, LaAlO3, and MgO substrates. The first film can exist in four equivalent crystallographic orientations in the sample plane, while the other three have only one orientation. The maxima of rho and Delta rho/rho of the first film are broadened considerably in the vicinity of the Curie point T-C compared to the three others, the magnitude of rho itself being larger by 1.5 orders of magnitude, and a large negative magnetoresistance (l Delta rho/rho l similar to 10% in a field of 8.4 kOe) is observed at temperatures 80 less than or equal to T less than or equal to 200 K. In all films, the magnetic moment per molecule at 5 K is similar to 46% smaller than the pure spin value, due to the existence of magnetically disordered regions. The larger value of rho of the film deposited on ZrO2(Y2O3) is due to the electrical resistance of the boundaries separating regions with different crystallographic orientations, and the magnetoresistance is associated with polarized carriers tunneling through the boundaries coinciding with domain walls. The low-temperature magnetoresistance in fields above technical saturation is caused by the strong p-d exchange coupling within spin-ordered regions. (C) 2000 MAIK "Nauka/Interperiodica".
- Добавил в систему: Абрамович Анна Ивановна