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Nonlinear analysis of the degree of order and chaos of morphology of porous silicon nanostructuresстатья
Информация о цитировании статьи получена из
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 24 января 2020 г.
- Авторы: Zhanabaev Z.Zh, Grevtseva T.Yu, Gonchar K.A., Mussabek G.K., Yermukhamed D., Serikbayev A.A., Assilbayeva R.B., Turmukhambetov A.Zh, Timoshenko V.Yu
- Журнал: CEUR Workshop Proceedings
- Том: 2391
- Год издания: 2019
- Издательство: M. Jeusfeld c/o Redaktion Sun SITE, Informatik V, RWTH Aachen
- Местоположение издательства: Aachen, Germany
- Первая страница: 187
- Последняя страница: 197
- DOI: 10.18287/1613-0073-2019-2391-187-197
- Аннотация: This work has been done to identify quantitative criteria the degree of order and chaos morphology of porous layers consisting of silicon nanowire arrays. In order to fulfill the work, a method of using metal-assisted chemical etching has been utilized to produce nanowires. There has been done a work of digital processing of porous film images which were extracted by scanning electron microscope. Informational-entropic and Fourier analysis have been applied to quantitatively describe the degree of order and chaos in nanostructure distribution in the layers. Self-similarity of the layer morphology has been quantitatively described via its fractal dimensions by correlation method. The applied approach for image processing allows us to distinguish the morphological features of as-called "black" (more ordered) and "white" (less ordered) silicon layers, which are characterized by minimal and maximal optical reflection, respectively. From all of the methods of digital techniques that we have used the method for determining the conditional information of a chaotic set was proved to be the most informative.
- Добавил в систему: Гончар Кирилл Александрович