Spatially controlled fabrication of single NV centers in IIa HPHT diamondстатьяИсследовательская статья
Статья опубликована в высокорейтинговом журнале
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Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 17 июля 2020 г.
Аннотация:Single NV centers in HPHT IIa diamond are fabricated by helium implantation through lithographic masks. The concentrations of created NV centers in different growth sectors of HPHT are compared quantitatively. It is shown that the purest {001} growth sector (GS) of HPHT diamond allows to create groups of single NV centers in predetermined locations. The {001} GS HPHT diamond is thus considered a good material for applications that involve single NV centers.