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Small gaps in p-AlGaAs/GaAsP/n-AlGaAs quantum well energy spectrum and polarization of the emitting lightтезисы доклада
- Авторы: Bogdanov E.V., Minina N.Ya
- Сборник: Joint Conference of New Trends in Topological Insulators and 17th International Conference on Narrow Gap Systems. Short Program and General Information, July 24 - 29, 2016, Würzburg, Germany
- Тезисы
- Год издания: 2016
- Место издания: Würzburg University Würzburg, Germany
- Первая страница: 136
- Аннотация: Under external stress, variation of small gaps in a quantum well energy spectrum of heterostructures, grown on the base of wide gap semiconductors, may strongly transform their physical properties. It was shown earlier, that under uniaxial compression P=5 kbar along [110] direction the electroluminescence spectrum of p-AlGaAs/GaAsP/n-AlGaAs laser diode, emitting in 808 nm, demonstrates rather moderate blue shift up to 25 meV, determined by the fundamental gap increase under compression. Going along with this effect, according to the numerical calculations represented in this work, really dramatic changes could take place in correlation between TM and TE polarization modes of the emitting light due to evolution of small gaps in GaAsP quantum well.
- Добавил в систему: Богданов Евгений Владимирович