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Inhomogeneous Microstructure and Electrical Transport Properties at the LaAlO3/SrTiO3 Interfaceстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 19 июля 2013 г.
- Авторы: Kalabukhov A., Claeson T., Aurino P.P., Gunnarsson R., Winkler D., Olsson E., Tuzla N., Börjesson J., Cao Y., Nyborg L., Boikov Y.A., Serenkov I.T., Sakharov V.I., Volkov M.P.
- Журнал: Japanese Journal of Applied Physics
- Том: 51
- Год издания: 2012
- Издательство: Institute of Pure and Applied Physics
- Местоположение издательства: Japan
- Первая страница: 11PG10-1
- Последняя страница: 11PG10-6
- DOI: 10.1143/JJAP.51.11PG10
- Аннотация: Medium-energy ion spectroscopy (MEIS), scanning transmission electron microscopy (STEM) and X-ray photoemission spectroscopy (XPS) were used to investigate the composition and microstructure of LaAlO3/SrTiO3 (LAO/STO) interfaces grown by pulsed laser deposition of LAO on TiO2-terminated STO substrates under different oxidizing conditions. MEIS and XPS indicated Sr/La and Al/Ti intermixing within several atomic layers at all studied interfaces. XPS and STEM revealed that La diffuses deeper than Al. Analysis of the MEIS data suggests inhomogeneous lateral distribution of the diffused elements. This is further supported by the observation of a large positive magneto-resistance at low temperatures. We discuss the role of lateral inhomogeneities on the formation of the electron gas at the LAO/STO interface.
- Добавил в систему: Калабухов Алексей Сергеевич