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Properties of organosilicate low- films with 1,3- and 1,3,5-benzene bridges between Si atomsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 29 июля 2020 г.
- Авторы: Chunguang Lv, Kohler Nicole, Wang Xuesong, Lin Hongxiao, Zhiwei He, Yu-Hsuan Wu, Leu Jihperng, Wei Shuhua, Zhang Jing, Yan Jiang, Palov Alexander P., Baklanov Mikhail R.
- Журнал: Japanese Journal of Applied Physics
- Том: 59
- Номер: SL
- Год издания: 2020
- Издательство: Institute of Pure and Applied Physics
- Местоположение издательства: Japan
- Первая страница: SLLG01-1
- Последняя страница: SLLG01-9
- DOI: 10.35848/1347-4065/ab86dc
- Аннотация: Organosilicate (OSG) low dielectric constant films containing different concentrations of 1,3- and 1,3,5-benzene bridges between Si atoms are fabricated using 1,3,5-tribromobenzene via spin-on deposition and evaporation induced self-assembling. Chemical composition, pore structure, mechanical, dielectric and hydrophobic properties of as-prepared benzene bridged OSG thin films are studied using nuclear magnetic resonance, Fourier-transform infrared spectroscopy, ellipsometric porosimetry, nanoindentation, CV measurements and water contact angle. The precursors were synthesized by using two methods with the goal of understanding the effect of 1,3,5-benzene concentration on the films properties. It is shown that the films have very small pore size that does not change with porosity. No significant change in mechanical properties was observed at two different ratios of 1,3- and 1,3,5-benzene bridged films
- Добавил в систему: Палов Александр Петрович
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