Development of High-Sensitivity Piezoresistive Pressure Sensors for -0.5…0.5 kPa

Авторы: Basov Mikhail, Prigodskiy Denis
Журнал: Journal of Micromechanics and Microengineering
Год издания: 2020
Издательство: IOP Publishing
Местоположение издательства: [Bristol, UK], England
DOI: 10.1088/1361-6439/ab9581
Аннотация: A mathematical model of an ultrahigh sensitivity piezoresistive chip of a pressure sensor with a range from -0.5 to 0.5 kPa has been developed. The optimum geometrical dimensions of a specific silicon membrane with a combination of rigid islands to ensure a trade-off relationship between sensitivity (Ssamples = 34.5 mV/kPa/V) and nonlinearity (2KNL samples = 0.81 %FS) have been determined. The paper also studies the range of the membrane deflection and makes recommendations on position of stops limiting diaphragm deflection in both directions; the stops allow for increasing burst pressure Pburst up to 450 кPa. The simulated data has been related to that of experimental samples and their comparative analysis showed the relevance of the mathematical model (estimated sensitivity and nonlinearity errors calculated on the basis of average values are 1.5% and 19%, respdectively).
Добавил в систему: Басов Михаил Викторович

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