Spin-torque quantization and microwave sensitivity of a nano-sized spin diodeтезисы доклада
Информация о цитировании статьи получена из
Web of Science
Дата последнего поиска статьи во внешних источниках: 10 февраля 2021 г.
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Авторы:
Demin G.,
Popkov A.
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Сборник:
EPJ Web of Conferences
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Серия:
EPJ Web Conf. ( Moscow International Symposium on Magnetism (MISM 2017))
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Том:
185
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Тезисы
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Год издания:
2018
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Издательство:
EDP Sciences
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Местоположение издательства:
France
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Номер статьи:
01020
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Аннотация:
Rectification of microwave signal by the spin-torque diode is very promising for its practical applications in microwave imaging. This is due to a very high sensitivity of magnetic tunnel junction under the bias current, which was previously demonstrated in a number of works [1-3]. The decreasing of cross-sectional area of the spin-torque diode up to the nano-sized dimensions below 10 nm allows one to reach high sensitivity without any bias current. Transverse quantization of electron states in the magnetic nanowire based on nano-sized metallic spin valves and magnetic tunnel junctions can create an additional impact not only on the magnetoresistance, but also on the spin-transfer torque in such structures. In this work we present an analysis of the quantization effect of conductance and spin-transfer torques on the microwave sensitivity of nano-sized spin-torque diodes during the reduction of its cross-sectional area. It was found that the magnetoresistance values up to 130 % can be achieved in a magnetic nanowire containing spin-valve diode with the nonmagnetic metal spacer. As a result, the maximum microwave sensitivity of spin-torque diodes based on these structures can be increased several times that opens the way for the further development of highly sensitive microwave detectors. © 2018 The Authors, published by EDP Sciences.
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Добавил в систему:
Демин Глеб Дмитриевич