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Spin-torque quantization and microwave sensitivity of a nano-sized spin diodeтезисы доклада
Информация о цитировании статьи получена из
Web of Science
Дата последнего поиска статьи во внешних источниках: 10 февраля 2021 г.
- Авторы: Demin G., Popkov A.
- Сборник: EPJ Web of Conferences
- Серия: EPJ Web Conf. ( Moscow International Symposium on Magnetism (MISM 2017))
- Том: 185
- Тезисы
- Год издания: 2018
- Издательство: EDP Sciences
- Местоположение издательства: France
- Номер статьи: 01020
- Аннотация: Rectification of microwave signal by the spin-torque diode is very promising for its practical applications in microwave imaging. This is due to a very high sensitivity of magnetic tunnel junction under the bias current, which was previously demonstrated in a number of works [1-3]. The decreasing of cross-sectional area of the spin-torque diode up to the nano-sized dimensions below 10 nm allows one to reach high sensitivity without any bias current. Transverse quantization of electron states in the magnetic nanowire based on nano-sized metallic spin valves and magnetic tunnel junctions can create an additional impact not only on the magnetoresistance, but also on the spin-transfer torque in such structures. In this work we present an analysis of the quantization effect of conductance and spin-transfer torques on the microwave sensitivity of nano-sized spin-torque diodes during the reduction of its cross-sectional area. It was found that the magnetoresistance values up to 130 % can be achieved in a magnetic nanowire containing spin-valve diode with the nonmagnetic metal spacer. As a result, the maximum microwave sensitivity of spin-torque diodes based on these structures can be increased several times that opens the way for the further development of highly sensitive microwave detectors. © 2018 The Authors, published by EDP Sciences.
- Добавил в систему: Демин Глеб Дмитриевич