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Effect of pressure on electronic structure of Pb1−xSnxTea alloys doped with galliumстатья
Информация о цитировании статьи получена из
Scopus
Дата последнего поиска статьи во внешних источниках: 29 апреля 2021 г.
- Авторы: Skipetrov E., Golubev A., Dmitriev N., Slyn'ko V.
- Сборник: MRS Symposium Proceedings
- Серия: Symposium II – Materials in Extreme Environments
- Том: 929
- Год издания: 2006
- Издательство: Materials Research Society
- Местоположение издательства: United States
- Номер статьи: 0929-II04-2
- DOI: 10.1557/PROC-0929-II04-21
- Аннотация: The galvanomagnetic effects in the n-Pb1−xSnxTe:Ga (x=0.09-0.21) alloys at the temperatures 4.2≤T≤300 K and under hydrostatic compression up to 16 kbar have been investigated. It is shown that in all samples and in the whole investigated pressure range temperature dependencies of resistivity and Hall coefficient have a “metallic” character, indicating stabilization of Fermi level by the impurity resonant level. Using the experimental data in the frame of two-band dispersion law the dependencies of the free electron concentration and the Fermi level position upon temperature, matrix composition and pressure were calculated. The temperature, composition and pressure coefficients of gallium resonant level movement were obtained and the electronic structure under varying the alloy composition and under pressure were built.
- Добавил в систему: Скипетров Евгений Павлович