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A Device for Noncontact Determination of the Photosensitivity Distribution on Areas of n+–p(n)–p+-Type Silicon Structuresстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 8 января 2021 г.
- Автор: Koshelev O.G.
- Журнал: Instruments and Experimental Techniques
- Том: 63
- Номер: 4
- Год издания: 2020
- Издательство: Pleiades Publishing, Ltd
- Местоположение издательства: Road Town, United Kingdom
- Первая страница: 604
- Последняя страница: 610
- DOI: 10.1134/S0020441220040144
- Аннотация: A new device has been considered that allows measuring the photosensitivity contrast of silicon structures of the n+-p(n)-p+ type without contacts. The structure is located between the capacitor plates. It is locally illuminated from the side of the p–n junction by two intensity modulated lasers. The wavelengths of these lasers are 1064 and 808 nm. The radiation of the first laser is absorbed throughout the thickness of the base region, and the second - only near its surface. The photosensitivity contrast is determined by the ratio of the amplitudes of the modulations, at which the total variable photo emf becomes 0. Such compensation allows avoiding errors associated with shunting of the illuminated part of the structure with its rest due to currents in n+ and p+ layers.The contrasts of the photosensitivity of silicon n+-p-p+ structures are compared by measurements with this compensation method and the standard short-circuit current method. The difference was under 6%, which is consistent with the calculations.
- Добавил в систему: Кошелев Олег Григорьевич