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Hafnium oxide layer-enhanced single-walled carbon nanotube field-effect transistor-based sensing platformстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 8 сентября 2021 г.
- Авторы: Menga Qing Yi, Wei Shuhua, Xu Zhiyuan, Cao Qiang, Xiao Yushi, Liu Na, Liu Huan, Han Gang, Zhang Jing, Yana Jiang, Palov Alexander P., Wu Lidong
- Журнал: Analytica Chimica Acta
- Том: 1147
- Год издания: 2020
- Издательство: Elsevier BV
- Местоположение издательства: Netherlands
- Первая страница: 99
- Последняя страница: 107
- Аннотация: Single-walled carbon nanotube-based field effect transistors (SWCNT-FETs) are ideal candidates for fabricating sensors and have been widely used for chemical sensing applications. SWCNT-FETs have low selectivity because of the environmentally sensitive electronic properties of SWCNTs, and SWCNT-FETs also show a high noise signal and poor sensitivity because of charge trapping from Si–OH hydration of the SiO2/Si substrate on the SWCNTs. Herein, poly (4-vinylpyridine) (P4VP) was used for noncovalent attachment to SWCNTs and selective binding to copper ions (Cu2+). Importantly, the introduction of a hafnium-oxide (HfO2) layer through atomic layer deposition (ALD) overcame the charge trapping by SiO2 hydration and remarkably decreased the interference signal. The sensitivity of the P4VP/SWCNT/HfO2-FET sensor for Cu2+ was 7.9 μA μM−1, which was approximately 100 times higher than that of the P4VP/SWCNT/SiO2-FET sensor, and its limit of detection (LOD) was as low as 33 pmol L−1. Thus, the P4VP/SWCNT/HfO2-FET sensor is a promising candidate for the development of Cu2+-selective sensors and can be designed for the large-scale manufacturing of custom-made sensors in the future.
- Добавил в систему: Палов Александр Петрович