Аннотация:Abstract: We report on technological methods for fabrication and investigation of the
following nanoelectronic structures from silicon-on-insulator (SOI):
- high sensitive field/charge sensors based on single electron transistor (SET) from
high doped silicon including transistor where the effective island is a single As dopant
atom,
- high sensitive field/charge sensors based on field effect transistor with nanowire
channel (FET).
We made a deep analysis of implementation of the SOI-based devices in physical,
chemical, biological and medical applications.