CHARGE-TRANSFER IN (GA2S3)1-X(EU2O3)X SINGLE-CRYSTALS IN STRONG ELECTRIC-FIELDSстатья
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Дата последнего поиска статьи во внешних источниках: 18 декабря 2013 г.
Аннотация:Detailed investigations are made of a strong electric field effect on the electroconductivity of (Ga2S3)1-x(Eu2O3)x single crystals with effective electroluminescence, photoluminescence, and cathodoluminescence in the temperature range from 77 to 400 K for the first time. The measurements are performed on samples with indium ohmic contacts with sandwich structure. it is found that 1. in electric fields of 2 to 3.3 x 10(2) V/CM Ohm’s law takes place, 2. in electric fields from 3.3 x 10(2) to 3.0 x 10(3) V/CM injection occurs, 3. in the region from 3 x 10(3) to 5 x 10(4) V/cm the electroconductivity changes according to the Poole-Frenkel law, and 4. in fields above 4 x 10(4) V/cm a temperature dependent tunnelling of charge carriers through a potential barrier decreased by square-root pi-epsilon-0-epsilon/e3F takes place.