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Impact of AlN Spacer on Metal–Semiconductor–Metal Pt–InAlGaN/GaN Heterostructures for Ultraviolet Detectionстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 9 ноября 2013 г.
- Авторы: Tommaso Brazzini, Saurabh Pandey, Maria Fatima Romero, Bokov Pavel Yu, Martin Feneberg, Gema Tabares, Anna Cavallini, Ruediger Goldhahn, Fernando Calle
- Журнал: Japanese Journal of Applied Physics
- Том: 52
- Год издания: 2013
- Издательство: Institute of Pure and Applied Physics
- Местоположение издательства: Japan
- Первая страница: 08JK04-1
- Последняя страница: 08JK04-4
- DOI: 10.7567/JJAP.52.08JK04
- Аннотация: We report on metal–semiconductor–metal (MSM) photodetectors (PDs) fabricated on InAlGaN/GaN two-dimensional electron gas (2DEG)heterostructures. Electrical and photodetection properties were compared in two structures with and without an AlN spacer between the barrier(InAlGaN) and the GaN. The presence of the spacer hugely reduces the leakage current, allowing biasing at higher voltages. In photodetection, gain is obtained in both structures at a high bias. The photocurrent transient behavior revealed a faster response for excitation energy close to the GaN band edge than for energy above the barrier band edge. The fabrication and improvement of this type of device can lead to integration with the already mature high-electron-mobility transistor (HEMT) technology.
- Добавил в систему: Боков Павел Юрьевич