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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Policrystals and single crystals of manganese-doped germanium cadmium diarsenide were prepared. The polycrystals were prepared from presynthesized CdAs2, germanium, arsenic, and manganese; the manganese content of the feed was 1, 3, 6, 10, or 15 wt %. The (CdGe,Mn)As2 single crystals doped with 0.5wt% Mn were grown by the vertical Bridgman technique followed by heat treatment. The manganese was determined by atomic absorption. The unit cell parameters determined as a function of the manganese concentration do not obey the Vegard law. The homogeneity boundary was found to lie in the region of about 6wt%Mn. The Seebeck coefficient at 300 K confirms the p-type conductivity of the materials containing lessthan 6wt%Mn. The magnetization in fields up to 50 kOe, magnetic susceptibility, and electrical resistance were measured over a wide temperature range. In the (CdGe,Mn)As2 samples with 1, 3, or 6 wt% Mn, the magnetization was found to decrease shaply at Tc = 355 K. Ferromagnetic ordering may be associated with the vacancies (Cd, Vcd,Mn)GeAs2, nonstoichiometry (CdGe,Mn)GeAs2, and magnetic exchange between manganese ions through mobile holes.