Effect of silicon target porosity on laser ablation threshold: molecular dynamics simulationстатья
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Дата последнего поиска статьи во внешних источниках: 15 июля 2021 г.
Аннотация:Ablation of a porous silicon target under irradiation with ultrashort laser pulse is simulated bymeans of the molecular dynamics approach. The number of ablated atoms is calculated fortargets with different porosity under irradiation with wavelengths in ultraviolet (UV) and visiblespectral ranges, which correspond to stronger and weaker absorption coefficient, respectively.An increase of the porosity to 80% leads to 1.5–3 times decrease of the ablation thresholdcompared to the bulk silicon, while a decrease of pores size from 2.5 to 1.2 nm leads to thestronger ablation threshold drop and the effect is stronger for the UV irradiation. The results areuseful for laser processing of silicon-based targets and nanofabrication.