Role of Resonant Charge-Exchange in Photoluminescence of B-Doped Carbonized Porous Siliconстатья
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Дата последнего поиска статьи во внешних источниках: 12 октября 2013 г.
Аннотация:Time dependences of photo-luminescence of porous silicon after its fast high-temperature carbonization (1000-1200°C) and simultaneous doping by B, P, Ga and Al were studied. The samples doped with B atoms show anomalously slow quenching in the blue-green band (2.4 eV) of PL, as well as non-monotonous oscillating character of PL decrease after laser excitation turnoff with the period of 50 msec.