Normal-phase propagation over an HTSC film heated by microwave radiationстатья
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Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 1 декабря 2021 г.
Местоположение издательства:[Bristol, UK], England
Первая страница:318
Последняя страница:324
Аннотация:The dynamics of the S - N transition of a thin HTSC film heated by microwave radiation is studied theoretically. The dependence of the NS-interface propagation velocity v on the microwave power P is found by solving the non-stationary heat balance equation. Two-dimensional effects related to a non-linear heating over the thickness of a substrate, of which the reverse side is stabilized at a temperature , are shown to be essential for calculations of the dependence v(P). A qualitative model which allows one to explain specific features of the NS-interface propagation is proposed. Analytical results are confirmed by a direct numerical simulation of the S - N transition process and differ appreciably from the prediction of the conventional one-dimensional theory. The results obtained may be of importance in the study of the S - N transition in superconducting microwave devices.