Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility

Antonova, I.V.; Nebogatikova, N.A.; Stepina, N.P.; Volodin, V.A.; Kirienko, V.V.; Rybin, M.G.; Obraztsova, E.D.; Golyashov, V.A.; Kokh, K.A.; Tereshchenko, O.E.

Авторы: Antonova I.V., Nebogatikova N.A., Stepina N.P., Volodin V.A., Kirienko V.V., Rybin M.G., Obraztsova E.D., Golyashov V.A., Kokh K.A., Tereshchenko O.E.
Журнал: Journal of Materials Science
Том: 56
Год издания: 2021
Издательство: Springer Nature
Местоположение издательства: Switzerland
Первая страница: 9330
Последняя страница: 9343
DOI: 10.1007/s10853-021-05836-y
Аннотация: Heterostructures of Bi2Se3 topological insulators were epitaxially grown on graphene by means of the physical vapor deposition at 500 o C. Micrometersized flakes with thickness 1 QL (quintuple layer ~ 1 nm) and films of millimeter- scale with thicknesses 2–6 QL had been grown on CVD graphene. The minimum thickness of large-scaled continuous Bi2Se3 films was found to be ~ 8 QL for the regime used. The heterostructures with a Bi2Se3 film thickness of >10 QL had resistivity as low as 200–500 cm2/sq and a high room temperature carrier mobility ~1000–3400 cm2/Vs in the Bi2Se3/graphene interface channel. Moreover, the coexistence of a p-type graphene-related conductive channel, simultaneously with the n-type conductive surface channel of Bi2Se3, was observed. The improvement of the bottom Bi2Se3/graphene interface with the increase in the growth time clearly manifested itself in the increase of conductivity and carrier mobility in the grown layer. The grown Bi2Se3/G structures have lower resistivities and more than one order of magnitude higher carrier mobilities in comparison with the van der Waals Bi2Se3/graphene heterostructures created employing exfoliation of thin Bi2Se3 layers. The grown heterostructures demonstrated the properties that are perspective for new functional devices, for a variety of signal processing and logic applications.
Добавил в систему: Образцова Елена Дмитриевна

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