Evolution of Electron Transport under Resistive Switching in Porphyrazine Filmsстатья
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Дата последнего поиска статьи во внешних источниках: 15 сентября 2021 г.
Аннотация:An analysis of the I–V characteristics makes it possible to determine the mechanisms of conduc-tion corresponding to different states of the flow channels upon resistive switching in porphyrazine films.A variation in the temperature, the structure of the dielectric matrix, and the type of majority charge carriersmakes it possible to estimate the applicability of the model of conducting filaments for describing transportand determining the mechanisms of conduction for each state of the system.