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Behavior of implanted Xe, Kr and Ar in nanodiamond and thin graphene stacks: experiment and modelingстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 27 октября 2021 г.
- Авторы: Shiryaev A.A., Trigub A., Voronina E.N., Kvashnina K.O., Bukhovets V.L.
- Журнал: Physical Chemistry Chemical Physics
- Том: 23
- Год издания: 2021
- Издательство: Royal Society of Chemistry
- Местоположение издательства: United Kingdom
- Первая страница: 21729
- Последняя страница: 21737
- DOI: 10.1039/d1cp02600c
- Аннотация: Implantation and subsequent behaviour of heavy noble gases (Ar, Kr, and Xe) in few-layer graphene sheets and in nanodiamonds are studied both using computational methods and experimentally using X-ray absorption spectroscopy. X-ray absorption spectroscopy provides substantial support for Xe-vacancy (Xe-V) defects as main sites for Xe in nanodiamonds. It is shown that noble gases in thin graphene stacks distort the layers, forming bulges. The energy of an ion placed in between flat graphene sheets is notably lower than that in domains with high curvature. However, if the ion is trapped in the curved domain, considerable additional energy is required to displace it. This phenomenon is likely responsible for strong binding of noble gases implanted into disordered carbonaceous phase in meteorites (the Q-component).
- Добавил в систему: Воронина Екатерина Николаевна