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Terahertz signatures of ultrafast Dirac fermion relaxation at the surface of topological insulatorsстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 15 декабря 2021 г.
- Авторы: Kovalev S.P., Tielrooij K.J., Deinert J.C., Ilyakov I., Awari N., Chen M., Ponomaryov A., Bawatna M., de Oliveira T.V.A.G, Eng L.M., Kuznetsov K.A., Safronenkov D.A., Kitaeva G.Kh, Kuznetsov P.I., Hafez H.A., Turchinovich D., Gensch M.
- Журнал: NPJ Quantum Materials
- Том: 6
- Год издания: 2021
- Издательство: Nature Research
- Местоположение издательства: London, UK
- Первая страница: 1
- Последняя страница: 5
- DOI: 10.1038/s41535-021-00384-9
- Аннотация: Topologically protected surface states present rich physics and promising spintronic, optoelectronic, and photonic applications thatrequire a proper understanding of their ultrafast carrier dynamics. Here, we investigate these dynamics in topological insulators (TIs)of the bismuth and antimony chalcogenide family, where we isolate the response of Dirac fermions at the surface from theresponse of bulk carriers by combining photoexcitation with below-bandgap terahertz (THz) photons and TI samples with varyingFermi level, including one sample with the Fermi level located within the bandgap. We identify distinctly faster relaxation of chargecarriers in the topologically protected Dirac surface states (few hundred femtoseconds), compared to bulk carriers (fewpicoseconds). In agreement with such fast cooling dynamics, we observe THz harmonic generation without any saturation effectsfor increasing incident fields, unlike graphene which exhibits strong saturation. This opens up promising avenues for increased THznonlinear conversion efficiencies, and high-bandwidth optoelectronic and spintronic information and communication applications.
- Добавил в систему: Кузнецов Кирилл Андреевич