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Identifying Native Point Defects in the Topological Insulator Bi2Te3статья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 29 сентября 2021 г.
- Авторы: Netsou Asteriona-Maria, Muzychenko Dmitry A., Dausy Heleen, Chen Taishi, Song Fengqi, Schouteden Koen, Van Bael Margriet J., Van Haesendonck Chris
- Журнал: ACS Nano
- Том: 14
- Номер: 10
- Год издания: 2020
- Издательство: American Chemical Society
- Местоположение издательства: United States
- Первая страница: 13172
- Последняя страница: 13179
- DOI: 10.1021/acsnano.0c04861
- Аннотация: We successfully identified native point defects that occur in Bi2Te3 crystals by combining high-resolution bias-dependent scanning tunneling microscopy and density functional theory based calculations. As-grown Bi2Te3 crystals contain vacancies, antisites, and interstitial defects that may result in bulk conductivity and therefore may change the insulating bulk character. Here, we demonstrate the interplay between the growth conditions and the densiy of different types of native near-surface defects. In particular, scanning tunneling’ spectroscopy reveals the dependence on not only the local atomic environment but also on the growth kinetics and the resulting sample doping from n-type toward intrinsic crystals with the Fermi level positioned inside the energy gap. Our results establish a bias dependent STM signature of the Bi2Te3 native defects and shed light on the link between the native defects and the electronic properties of Bi2Te3, which is relevant for the synthesis of topological insulator materials and the related functional properties.
- Добавил в систему: Музыченко Дмитрий Анатольевич