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Carbon Beam at I-3 Injector for Semiconductor Implantationстатья Исследовательская статья
- Авторы: Losev A.A., Satov Yu A., Alekseev N.N., Shumshurov A.V., Milyachenko A.D., Alekseev P.N., Kulevoy T.V., Lagov P.B., Pavlov Yu S., Letovaltseva M.E.
- Сборник: IPAC 2021 - Proceedings of the 12th International Particle Accelerator Conference, Campinas, Brazil
- Серия: International Particle Accelerator Conference
- Год издания: 2021
- Издательство: Joint Accelerator Conferences Website Publishing
- Местоположение издательства: Geneva, Switzerland
- Первая страница: 1489
- Последняя страница: 1491
- DOI: 10.18429/JACoW-IPAC2021-TUPAB057
- Аннотация: Carbon implantation can be effectively used for axial minority charge carriers lifetime control in various silicon bulk and epitaxial planar structures. When carbon is implanted, more stable recombination centers are formed and silicon is not doped with additional impurities, as for example, when irradiated with protons or helium ions. Economically, such a process competes with alternative methods, and is more efficient for obtaining small lifetimes (several nanoseconds). I-3 ion injector with laser-plasma ion source in Institute for theoretical and experimental physics (ITEP) is used as ion implanter in semiconductors. The ion source uses pulsed CO₂ laser setup with radiation-flux density of 10¹¹ W/cm² at target surface. The ion source produces beams of various ions from solid targets. The generated ion beam is accelerated in the two gap RF resonator at voltage of up to 2 MV per gap. Resulting beam energy is up to 4 MV per charge. Parameters of carbon ion beam generated and used for semiconductor samples irradiation during experiments for axial minority charge carriers lifetime control in various silicon bulk and epitaxial planar structures are presented.
- Добавил в систему: Павлов Юрий Сергеевич