Electric field control of antiferroelectric domain patternстатья
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Дата последнего поиска статьи во внешних источниках: 3 ноября 2021 г.
Аннотация:Control of domain and domain wall configurations in antiferroelectrics is a necessary step towards practicaluse of new functionalities based on polar domain wall structures. Here we propose and demonstrate a domainengineering scheme that provides an antiferroelectric state with only one type of orientational domains and onetype of walls. We demonstrate with in situ synchrotron diffraction experiment that in a material, where thetransition from the high-symmetry nonpolar phase to that antiferroelectric occurs via crossing an intermediate,once the transition is passed under a moderate electric field, the final antiferroelectric domain state can be fullycontrolled. A theoretical analysis shows that such a phenomenon can be explained in terms of biquadraticcoupling between the polarization and antiferroelectric order parameter. This analysis also suggests that theelectric-field control of the antiferroelectric state may be possible in a more general case where the intermediateferroelectric state is absent. Anisotropy of lattice excitations in the intermediate polar phase under electric fieldis uncovered by an inelastic x-ray scattering experiment, which indicates that lattice instability is a driving forceof transformation towards antiferroelectric phase despite of a strong first character of the transition.