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(Er,Yb):GdAl3(BO3)4 Laser passively Q-switched by MBE-grown Cr:ZnS/Cr,Co:ZnS thin filmsтезисы доклада
- Авторы: Gorbachenya K.N., Kisel V.E., Yasukevich A.S., Tolstik N., Karhu E., Furtula V., Sorokin E., Maltsev V.V., Leonyuk N.I., Gibson U., Sorokina I.T., Kuleshov N.V.
- Сборник: ICONO-LAT 2016 Conference: technical digest
- Тезисы
- Год издания: 2016
- Место издания: BNTU Minsk
- Первая страница: LTuJ2
- Аннотация: Passively Q-switched Er,Yb:GdAB laser with MBE-grown Cr:ZnS/Cr,Co:ZnS thin film saturable absorber was demonstrated for the first time to our knowledge. The pulses with 10.7 µJ energy, 6 ns duration, and 31 kHz repetition rate were obtained at the wavelength of 1522 nm. The saturable absorber manufacturing technique allows obtaining integrtated AE-SK structures especially interesting for compact microchip Q-switched lasers with minimal pulse duration.
- Добавил в систему: Леонюк Николай Иванович