|
ИСТИНА |
Войти в систему Регистрация |
ИСТИНА ИНХС РАН |
||
Development of Adhesive Wafer Bonding Technologyстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Дата последнего поиска статьи во внешних источниках: 24 ноября 2021 г.
- Авторы: Fomichev M.Y., Makhiboroda M.A., Djuzhev N.A., Dedkova A.A., Gusev E.E.
- Сборник: Conference of Russian Young Researchers in Electrical and Electronic Engineering, ElConRus 2021
- Серия: IEEE
- Год издания: 2021
- Первая страница: 2558
- Последняя страница: 2562
- DOI: 10.1109/ElConRus51938.2021.9396080
- Аннотация: This paper shows the result of working out the operations of permanent bonding of Si-Si wafers and temporary bonding of Si-quartz wafers. The equipment was selected for the process of applying a thin-film material to increase the uniformity of the thickness of the adhesive, anti-adhesive, and photoresist layers. Also, the effects of flowing applied fluids to the back of the wafer are eliminated. The dependence of the thickness of the adhesive, anti-adhesive, and photoresist layers on the speed of rotation of the centrifuge was experimentally determined. It was compared with material developers' data. The curvature of the assembly does not exceed 10 μm after permanent bonding of Si-Si wafers with a diameter of 150 mm and a thickness of 675 μm. In the process of temporary bonding, the thickness of the device Si wafer after thinning was 93 ± 3 μm. The deflection of the thinned assembly does not exceed 30 μm.
- Добавил в систему: Дедкова Анна Александровна