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Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb1-xSnxTeстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 12 января 2022 г.
- Авторы: Galeeva A.V., Belov D.A., Kazakov A.S., Ikonnikov A.V., Artamkin A.I., Ryabova L.I., Volobuev V.V., Springholz G., Danilov S.N., Khokhlov D.R.
- Журнал: Nanomaterials
- Том: 11
- Год издания: 2021
- Издательство: MDPI
- Местоположение издательства: Basel, Switzerland
- Номер статьи: 3207
- DOI: 10.3390/nano11123207
- Аннотация: Topological crystalline insulators form a class of semiconductors for which surface electronstates with the Dirac dispersion relation are formed on surfaces with a certain crystallographicorientation. Pb1−xSnxTe alloys belong to the topological crystalline phase when the SnTe content x exceeds 0.35, while they are in the trivial phase at x < 0.35. For the surface crystallographic orientation (111), the appearance of topologically nontrivial surface states is expected. We studied the photoelectromagnetic (PEM) effect induced by laser terahertz radiation in Pb1−xSnxTe films in the composition range x = (0.11–0.44), with the (111) surface crystallographic orientation. It was found that in the trivial phase, the amplitude of the PEM effect is determined by the power of the incident radiation, while in the topological phase, the amplitude is proportional to the flux of laser radiation quanta. A possible mechanism responsible for the effect observed presumes damping of the thermalization rate of photoexcited electrons in the topological phase and, consequently, prevailing of electron diffusion, compared with energy relaxation.
- Добавил в систему: Хохлов Дмитрий Ремович