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Mid-IR-Sensitive n/p-Junction Fabricated on p-Type Si Surface via Ultrashort Pulse Laser n-Type Hyperdoping and High-Temperature Annealingстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 22 декабря 2021 г.
- Авторы: Kudryashov Sergey, Nastulyavichus Alena, Kirilenko Demid, Brunkov Pavel, Shakhmin Alexander, Rudenko Andrey, Melnik Nikolay, Khmelnitskii Roman, Martovitskii Victor, Uspenskaya Mayya, Prikhodko Dmitry, Tarelkin Sergey, Galkin Artem, Drozdova Taisia, Ionin Andrey
- Журнал: ACS Applied Electronic Materials
- Том: 3
- Номер: 2
- Год издания: 2021
- Издательство: American Chemical Society
- Местоположение издательства: United States
- Первая страница: 769
- Последняя страница: 777
- DOI: 10.1021/acsaelm.0c00914
- Аннотация: Abstract:The mid-infrared (IR)-sensitive n/p-junction was fabricated on a p-doped silicon (Si) wafer via ultrashort laser n-type surface hyperdoping and high-temperature annealing. First, the n-type sulfur hyperdoping regimes were studied by 0.3 ps IR (1030 nm) laser nanopatterning of Si surfaces covered by a millimeter-thick liquid carbon disulfide layer. The nanopatterned sub-micron thick Si surface layers demonstrate high exposuretunable near-IR (NIR)-mid-IR (MIR) optical density and related high (similar to 1 at. %) contents of sulfur, carbon, and oxygen, with their abundance and chemical states visualized by cross-sectional energy-dispersive spectroscopy and X-ray photoelectron spectroscopy, respectively. Their spatially inhomogeneous phase and structural features were characterized by high-resolution transmission electron microscopy, electron diffraction, and micro-Raman spectroscopy. High-temperature annealing (30 min) of the nanopatterned sub-micron thick Si surface layers in ambient air at 1150 degrees C and the following slow or fast quenching result in partial oxidation of the top amorphous layer. Upon oxide film delamination, the surface n/p-junction appears with the high sulfur-doping level at. (approximate to 0.5. at. %) and related NIR-MIR optical density and n-type conductivity with high free-electron concentration and mobility. This innovative laser-hyperdoping technology and the resulting promising characteristics of the annealed Si layers open a way for revisiting the established CMOS-compatible technology for IR-sensitive solar cell, thermal imaging, and night-vision device fabrication.
- Добавил в систему: Руденко Андрей Андреевич