Electroreflectance diagnostics of InGaN/AlGaN/GaN based LEDs structuresстатья
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Дата последнего поиска статьи во внешних источниках: 19 июля 2013 г.
Авторы:
Avakyants L. ,
Bokov P. ,
Chervyakov A. ,
Chuas A. ,
Yunovich A. ,
Vasileva E.,
Yavich B.
Журнал:
Physica Status Solidi (C) Current Topics in Solid State Physics
Том:
6
Номер:
12
Год издания:
2009
Первая страница:
2852
Последняя страница:
2854
DOI:
10.1002/pssc.200982530
Аннотация:
The LEDs InGaN/AlGaN/GaN heterostructures have been studied by means of electroreflectance spectroscopy. The interference fringes were observed in the electroreflectance spectra in the range of 460 - 1000 nm. Analysis of the period of the fringes shows that they are connected with the interference in the layers of the heterostructure with thicknesses of 240 nm, 720 nm and 4.9 μm. The interference signal from the region between multiple quantum wells and reflective mirror is connected with the changing of the reflection coefficient from the multiple quantum wells due to modulation of the electric field in the pn-junction and was used to determine the position of the multiple quantum wells in the heterostructures. © 2009 Wiley-VCH Verlag GmbH & Co. KGaA.
Добавил в систему:
Боков Павел Юрьевич