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A role of the built-in piezoelectric field in InGaN/AlGaN/GaN multiple quantum wells in the electroferlectance experimentsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Дата последнего поиска статьи во внешних источниках: 12 октября 2013 г.
- Авторы: Bokov P., Avakyants L., Badgutdinov M., Chervyakov A., Shirokov S., Yunovich A., Vasileva E., Snegov F., Bauman D., Yavich B.
- Журнал: Materials Research Society Symposium Proceedings
- Том: 1040
- Год издания: 2008
- Первая страница: 184
- Последняя страница: 189
- Аннотация: The influence of built-in piezoelectric field in the light-emitting diodes based on InGaN/AlGaN/GaN heterostructures on the electroreflectance spectra have been studied. The structures were grown by MOCVD technology and «flip-chip» mounted. Light was emitted or reflected through sapphire substrate. The interference fringes and spectral line connected with the InGaN/GaN multiple quantum wells region are observed in the electroreflectance spectra. Observed blue shift of spectral line from InGaN/GaN multiple quantum wells region with the increasing reverse bias voltage has been explained as the result of decreasing of the electric field in the quantum well. © 2008 Materials Research Society.
- Добавил в систему: Боков Павел Юрьевич