A role of the built-in piezoelectric field in InGaN/AlGaN/GaN multiple quantum wells in the electroferlectance experimentsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Дата последнего поиска статьи во внешних источниках: 12 октября 2013 г.
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Авторы:
Bokov P.,
Avakyants L.,
Badgutdinov M.,
Chervyakov A.,
Shirokov S.,
Yunovich A.,
Vasileva E.,
Snegov F.,
Bauman D.,
Yavich B.
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Журнал:
Materials Research Society Symposium Proceedings
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Том:
1040
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Год издания:
2008
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Первая страница:
184
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Последняя страница:
189
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Аннотация:
The influence of built-in piezoelectric field in the light-emitting diodes based on InGaN/AlGaN/GaN heterostructures on the electroreflectance spectra have been studied. The structures were grown by MOCVD technology and «flip-chip» mounted. Light was emitted or reflected through sapphire substrate. The interference fringes and spectral line connected with the InGaN/GaN multiple quantum wells region are observed in the electroreflectance spectra. Observed blue shift of spectral line from InGaN/GaN multiple quantum wells region with the increasing reverse bias voltage has been explained as the result of decreasing of the electric field in the quantum well. © 2008 Materials Research Society.
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Добавил в систему:
Боков Павел Юрьевич