|
ИСТИНА |
Войти в систему Регистрация |
ИСТИНА ИНХС РАН |
||
Room temperature photoreflectance investigation of undoped and doped GaAs/AlGaAs quantum well structuresстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Дата последнего поиска статьи во внешних источниках: 19 июля 2013 г.
- Авторы: Avakyants L.P., Bokov P.Yu, Chervyakov A.V., Galiev G.B., Klimov E.A.
- Сборник: Proceedings of SPIE - The International Society for Optical Engineering
- Год издания: 2004
- Первая страница: 605
- Последняя страница: 612
- DOI: 10.1117/12.562731
- Аннотация: The room temperature photoreflectance (PR) investigation of optical transitions in Al0.2Ga0.8As/GaAs/Al0.2Ga 0.8As single and coupled quantum wells is presented. The structures were grown by molecular beam epitaxy for different barrier thickness and quantum well width. Three kinds of spectral features were observed in PR spectra: sharp line connected with GaAs band gap (1.42 eV), Frantz-Keldysh oscillations near Al0.2Ga0.8As band gap (1.71 eV) and features originated from electron-hole transitions in quantum well. The energies of observed transitions have been compared with the results of envelope function calculations.
- Добавил в систему: Боков Павел Юрьевич