Doping Nature of Group V Elements in ZnO Single Crystals Grown from Melts at High Pressureстатья
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Дата последнего поиска статьи во внешних источниках: 1 июня 2022 г.
Аннотация:Herein, ZnO single crystals doped with group V elements have beengrown from melts at high pressure. Dopants were introduced in several forms such asSb2O3, P, As, Sb, and Zn3X2 (X = P, As, Sb) in a high-pressure cell. Systematic studiesof morphology were performed using optical microscopy and scanning electronmicroscopy. The crystal structure and lattice parameters were studied using X-raydiffraction and X-ray crystallography. Crystals exhibited distinct changes in size,shape, and color compared to undoped ZnO melt-grown single crystals due to thedopant influence. X-ray photoelectron spectroscopy was used to determine thevalence states of group V elements when incorporated in the ZnO lattice.Photoluminescence spectroscopy, Raman spectroscopy, and electron paramagnetic resonance spectroscopy were employed toinvestigate the nature of defects formed as a result of doping. The formation of VZn and VZn complexes was confirmed, and theirconcentrations were measured. Estimates of the number of VZn per dopant atom showed that the ratio is noticeably higher than theone suggested for the shallow complex As(P,Sb)Zn−2VZn commonly regarded as responsible for acceptor properties in ZnO.