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Tin trifluoroacetylacetonate [Sn(C5H4O2F3)2] as a precursor of tin dioxide in APCVD processстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 февраля 2017 г.
- Авторы: Popov V.S.a, Ignatov P.A.a, Churakov A.V.a, Simonenko E.P.a.b, Simonenko N.P.a.b, Ignatova N.N.c, Sevast’yanov V.G.a, Kuznetsov N.T.a
- Журнал: Russian Journal of Inorganic Chemistry
- Том: 61
- Номер: 5
- Год издания: 2016
- Издательство: Maik Nauka/Interperiodica Publishing
- Местоположение издательства: Russian Federation
- Первая страница: 545
- Последняя страница: 553
- DOI: 10.1134/S003602361605017X
- Аннотация: A new method of synthesis of volatile complex, tin trifluoroacetylacetonate [Sn(C5H4O2F3)2], was proposed. The prepared compound was identified by IR spectroscopy, CH analysis, X-ray powder diffraction, and DTA/TGA, the composition was confirmed by MALDI-TOF mass spectrometry, crystal structure was established. Thin films of tin dioxide on silicon were obtained by atmospheric pressure chemical vapor deposition using [Sn(C5H4O2F3)2] as a precursor. The morphology and composition of the films were studied by scanning electron microscopy, EDX elemental analysis, and X-ray powder diffraction. Surface resistance and light transmission in visible and near IR region were studied. © 2016, Pleiades Publishing, Ltd.
- Добавил в систему: Кузнецов Николай Тимофеевич