Preparation of carbon-nitride bulk samples in the presence of seed carbon-nitride filmsстатья
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Дата последнего поиска статьи во внешних источниках: 29 мая 2015 г.
Аннотация:A procedure was developed for preparing bulk carbon-nitride crystals from polymeric alpha-C3N4.2 at high pressure and high temperature in the presence of seeds of crystalline carbon-nitride films prepared by using a high-voltage discharge plasma combined with pulsed laser ablation of a graphite target. The samples were evaluated by using X-ray photoelectron spectroscopy (XPS), infrared (113) spectroscopy, Auger electron spectroscopy (AES), secondary-ion mass spectrometry (SIMS), scanning electron microscopy (SEM) and X-ray diffraction (XRD). Notably, XPS studies of the film composition before and after thermobaric treatments demonstrated that the nitrogen composition in the alpha-C3N4.2 material, which initially contained more than 58% nitrogen, decreased during the annealing process and reached a common, stable composition of similar to 45%. The thermobaric experiments were performed at 10 similar to 77 kbar and 350 similar to 1200 degreesC.