Аннотация:Er0.04Y0.96Al3(BO3)4, Er0.015Yb0.11Y0.875Al3(BO3)4 and NdAl3(BO3)4 epitaxial layers were grown from K2Mo3O10-based fluxed melts by LPE method. DSSG-grown YAB and NAB single crystals were used as substrates. Growth kinetics, homogeneity and micromorphology of (Er,Yb):YAB and NAB thin films were investigated.