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LAYER-BY-LAYER ANALYSIS OF A(4)B(6) THIN-FILM HETEROSTRUCTURES USING INDUCTIVELY-COUPLED PLASMA-ATOMIC FLUORESCENCE SPECTROMETRY (ICP-AFS)статья
Информация о цитировании статьи получена из
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Web of Science
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 12 октября 2013 г.
- Авторы: BOBRUIKO V.B., GLAVIN G.G., GASKOV A.M., MASO G.N.
- Журнал: Fresenius' journal of analytical chemistry
- Том: 349
- Номер: 6
- Год издания: 1994
- Издательство: Springer International
- Местоположение издательства: Berlin, Germany
- Первая страница: 424
- Последняя страница: 427
- DOI: 10.1007/BF00322926
- Аннотация: Abstract: The technique of layer-by-layer analysis of semiconductive A4B6 heterostructures using electrochemical etching and inductively coupled plasma atomic fluorescence spectrometry (ICP AFS) is developed. The Norr etching solution and electrochemical oxidation with subsequent dissolution of oxidized layers in acid were used to remove layers of 0.5 to several microns thickness. Pb1-xEuxTe/PbTe and Pb1-xEuxSe/PbSe heterostructures were analyzed. The Eu content in removed layers was determined by ICP-AFS. The data on Eu depth profiles were used for the evaluation of the Eu diffusion coefficient in this heterostructures to predict the changes of properties along the depth of the structure. The technique can be applied to the analysis of semiconductive heterostructures with different admixtures.
- Добавил в систему: Мазо Галина Николаевна