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Transparency oscillations of a silicon single crystal in passing from axial to planar channelingстатья
Информация о цитировании статьи получена из
Scopus,
Web of Science
Дата последнего поиска статьи во внешних источниках: 12 октября 2013 г.
- Авторы: Bulgakov Yu V., Shulga V.I.
- Журнал: Radiation effects
- Том: 28
- Год издания: 1976
- Издательство: Gordon and Breach.
- Местоположение издательства: New York, United States
- Первая страница: 15
- Последняя страница: 21
- DOI: 10.1080/00337577608233023
- Аннотация: The transparency coefficient, T, of thin (2.5 mkm) Si crystals relative to a well collimated 8.16 MeV He ion beam has been measured as a function of angle alpha between the beam direction and the [110] axis of crystals rotated in the (110) plane. Curve T(alpha) has been found to display minima at alpha = 0.15, 0.34 and 0.5 degr. Computer simulation of experimental conditions has shown that the first minimum is a result of competition of two processes: increase of the radius of ring-shaped angular distribution with increasing alpha and ion capture in the (110) planar channel. The remaining two minima are due to particle dechanneling from channel (110) resulting from resonance enhancement of transverse particle oscillations in the channel. Similar calculations have been carried out for the transition from axial [110] to planar (001) channeling. It has been shown that in this case the difference in the resonance conditions results in spatial separation of the ion beams that have passed through channels (001) with and without displaced arrangement of rows [110].
- Добавил в систему: Шульга Владимир Иванович