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Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructuresстатья Исследовательская статья
Статья опубликована в высокорейтинговом журнале
Статья опубликована в журнале из списка Web of Science и/или Scopus- Авторы: Abramkin D.S., Putyato M.A., Budennyy S.A., Gutakovskii A.K., Semyagin B.R., Preobrazhenskii V.V., Kolomys O.F., Strelchuk V.V., Shamirzaev T.S.
- Журнал: Journal of Applied Physics
- Том: 112
- Номер: 8
- Год издания: 2012
- Издательство: AIP Publishing
- Местоположение издательства: United States
- Первая страница: 083713
- DOI: 10.1063/1.4759258
- Аннотация: The atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures were studied. It was shown that the deposition of GaAs of the same nominal thickness leads to the formation of pseudomorphic GaAs/GaP quantum wells (QW), fully relaxed GaAs/GaP self-assembled quantum dots (SAQDs), or pseudomorphic GaAsP/GaP SAQDs depending on the growth temperature. We demonstrate that the atomic structure of Ga(As,P)/GaP heterostructures is ruled by the temperature dependence of adatom diffusion rate and GaAs-GaP intermixing. The band alignment of pseudomorphic GaAs/GaP QW and GaAsP/GaP SAQDs is shown to be of type II, in contrast to that of fully relaxed GaAs/GaP SAQDs, which have the band alignment of type I with the lowest electronic states at the indirect L valley of the GaAs conduction band.
- Добавил в систему: Буденный Семен Андреевич