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Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:The photoluminescence from ZnTe:Yb films grown on (100) GaAs by MBE was studied at different temperatures (4.2–350) K. The efficient Yb3+-related emission in ZnTe was observed up to room temperature. The analysis of the fine structure of the Yb luminescence spectra allowed us to suggest the energy level diagram of the crystal-field-split 4f13 levels for the dominant complex center based on Yb ion.