Femtosecond dynamics of laser-induced phase transition of the GaAs surface layer to a centrosymmetric phaseстатья
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Дата последнего поиска статьи во внешних источниках: 29 ноября 2013 г.
Аннотация:Recently we observed ultrafast laser-induced phase transition (on a time scale less than 100 fs) to a centrosymmetric semiconductor-like phase at the GaAs surface [1,2] by using time-resolved second harmonic generation in reflection. A phenomenological model describing this phase transition is developed. The new phase exists during the first 1 ps after laser excitation due to high plasma carrier density and lattice stress, the lattice temperature remaining well below the melting threshold