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Solitary wave of point defect formation and wave of impact ionization propagated under intensive generation of electron hole pairsстатья
Информация о цитировании статьи получена из
Web of Science
Дата последнего поиска статьи во внешних источниках: 27 мая 2015 г.
- Авторы: Emel'yanov Vladimir I., Rogacheva Alexandra V.
- Сборник: PROCEEDINGS OF SPIE
- Том: 3734
- Год издания: 1998
- Издательство: SPIE
- Местоположение издательства: Bellingham, WA, United States
- Первая страница: 111
- Последняя страница: 121
- DOI: 10.1117/12.342340;
- Аннотация: The model of the solitary defect formation wave (DFW) and the model of the impact ionization wave (IIW) ignited and propagated in semiconductors and dielectrics under intensive laser generation of electron-hole pairs are developed in close analogy with combustion wave. The characteristics of the DFW: critical laser intensity of DFW ignition, the shape, velocity of propagation and point defect concentration created by DFW are determined analytically. Analogous characteristics are obtained for the IIW. Quantitative interpretation of experimental results on modification of crystalline silicon surface by a train of picosecond laser pulses is carried out on the base of results obtained
- Добавил в систему: Емельянов Владимир Ильич