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Random spin-orbit gates in the system of a topological insulator and a quantum dotстатья
- Авторы: Wolski S., Inglot M., Jasiukiewicz C., Kouzakov K.A., Masłowski T., Szczepański T., Stagraczyński S., Stagraczyński R., Dugaev V.K., Chotorlishvili L.
- Журнал: Physical Review B
- Том: 106
- Номер: 22
- Год издания: 2022
- Издательство: American Physical Society
- Местоположение издательства: United States
- Первая страница: 1
- Последняя страница: 11
- Номер статьи: 224418
- DOI: 10.1103/physrevb.106.224418
- Аннотация: The spin-dependent scattering process in a system of a topological insulator and a quantum dot is studied. The unitary scattering process is viewed as a gate transformation applied to an initial state of two electrons. Due to the randomness imposed through the impurities and alloying-induced effects of band parameters, the formalism of the random unitary gates is implemented. For quantifying entanglement in the system, we explored concurrence and ensemble-averaged Rényi entropy. We found that an applied external magnetic field leads to long-range entanglement on distances much larger than the confinement length. We showed that topological features of itinerant electrons sustain the formation of robust long-distance entanglement, which survives even in the presence of strong disorder.
- Добавил в систему: Кузаков Константин Алексеевич