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ZnO nanoparticle formation in Si by Co-implantation of Zn and O+ lonsстатья
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 28 мая 2015 г.
- Авторы: Privezentsev V.V., Shemukhin A.A., Petrov D.V., Trifonov A.Y., Saraykin V.V., Lutzau A.V.
- Журнал: Solid State Phenomena
- Том: 205
- Год издания: 2014
- Первая страница: 502
- Последняя страница: 508
- DOI: 10.4028/www.scientific.net/SSP.205-206.502
- Аннотация: ZnO nanoparticles (NPs) formed in Czochralski-grown n-type (100) silicon substrates have been studied. The NPs were formed by co-implantation of 64Zn+ and 16O+ ions followed by furnace annealing in neutral/inert atmospheres for 1h. High-resolution transmission electron microscopy (HR TEM) of cross-section samples enabled the structural properties of the near surface layers to be characterized after implantation and annealing. The distribution of implant profiles was analyzed by secondary ion mass-spectrometry (SIMS). The surface morphology was studied by atomic force microscopy (AFM) and scanning electron microscopy (SEM). Identification of the phase content of the materials was carried out by high-resolution X-ray diffraction in θ-2θ scanning mode. In as-implanted samples, a big amorphous layer was formed which destroyed the NPs beneath the surface. After furnace annealing from 600 up to 800oC, ZnO(102) NPs with a size of ~7nm were formed in the recrystallization layer. Furnace annealing at temperatures above 900 oC gave rise to a restructuring of the silicon surface and ZnO NPs formed on the sample surface. At temperatures above 1000 ºC, out-diffusion of Zn from the sample occurred due to the large diffusion coefficient Zn at these temperatures.
- Добавил в систему: Шемухин Андрей Александрович