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Characteristics of a Multilayer SiOx(CH)yNz Film Deposited by Low Temperature Plasma Enhanced Chemical Vapor Deposition Using Hexamethyldisilazane/Ar/N2Oстатья
- Авторы: Lee June Hee, Jeong Chang Hyun, Lim Jong Tae, Zavaleyev Viktor A., Kyung Se Jin, Yeom Geun Young
- Журнал: Japanese Journal of Applied Physics
- Том: 45
- Номер: 10S
- Год издания: 2006
- Издательство: Institute of Pure and Applied Physics
- Местоположение издательства: Japan
- Первая страница: 8430
- DOI: 10.1143/jjap.45.8430
- Аннотация: SiOx(CH)yNz films were deposited at room temperature using plasma enhanced chemical vapor deposition (PECVD) with a gas mixture of hexamethyldisilazane [HMDS, Si2NH(CH3)6]/Ar/N2O. The characteristics of those films with increasing N2O were investigated. When no N2O was used, the film showed organic characteristics with a Si/O composition ratio of 2 and a large concentration of –CHx and N–H in the deposited film. However, with increasing N2O flow rate, oxygen-rich and transparent SiO2-like inorganic thin films could be obtained with a Si/O composition ratio of 0.5 and a lower –CHx and N–H in the deposited film. By turning on-and-off the N2O gas flow during SiOx(CH)yNz deposition, a multi-layer thin film consisting of an organic Si(CH)x-like film/inorganic SiO2-like thin film, which can be applied to the thin film passivation for organic devices could be successfully deposited.
- Добавил в систему: Завалеев Виктор Анатольевич