Inorganic structures as materials for gas sensorsстатья
Статья опубликована в высокорейтинговом журнале
Информация о цитировании статьи получена из
Web of Science,
Scopus
Статья опубликована в журнале из перечня ВАК
Статья опубликована в журнале из списка Web of Science и/или Scopus
Дата последнего поиска статьи во внешних источниках: 18 июля 2013 г.
Аннотация:Studies dealing with the design of new inorganic materials for gas sensors based on semiconductor structures are analysed. The influence of adsorbed molecules on the electronic state and the electrical conductivity of the surface and inner interfaces in semiconductor materials are discussed. The mechanism of gas sensitivity is considered in relation to metal/dielectric/semiconductor, semiconductor/dielectric/ semiconductor, metal/semiconductor, and semiconductor/semiconductor. Specific properties of heterostructures based on nanocrystalline metal oxides on single-crystalline silicon substrates with a dielectric SiO2 layer are noted. The sensor properties of the semiconductor structures in the detection of various molecules are described.