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Photoluminescence of sapphire irradiated by low-energy electrons and ionsстатья
- Авторы: Zykova E.Yu, Ozerova K.E., Tatarintsev A.A., Turkin A.N.
- Журнал: Optics and Spectroscopy (English translation of Optika i Spektroskopiya)
- Том: 130
- Номер: 9
- Год издания: 2022
- Издательство: Optical Society of America
- Местоположение издательства: United States
- Первая страница: 1104
- Последняя страница: 1109
- DOI: 10.21883/eos.2022.09.54827.3397-22
- Аннотация: Photoluminescence (PL) of sapphire single crystals as received and preirradiated by low energy Ar+ions andelectrons has been studied to reveal a relationship between sapphire charging under electron beam irradiation andradiation-induced defect formation. The photoluminescence spectra were obtained using a confocal microscopeexcitation wavelength of 445 nm as well as by a nonconfocal method with excitation at a wavelength of 355 nm.The lines observed in PL spectra for all samples are associated with both intrinsic and impurity defects. It has beenestablished that preliminary ion irradiation leads to disordering of the near-surface region of the sample resultingin a significant increase in the photoluminescence intensity. Preliminary electron irradiation can lead to a change inthe charge state of defects that initially exist in the crystal.
- Добавил в систему: Туркин Андрей Николаевич